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DMN3135LVT
Maximum Ratings @ T A = 25°C unless otherwise stated
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
3.5
2.7
4.3
3.3
2.8
2.1
3.4
2.6
25
1.5
A
A
A
A
A
A
Thermal Characteristics
@ T A = 25°C unless otherwise stated
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
0.84
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
155
109
1.27
102
72
34
-55 to +150
°C/W
W
°C/W
°C
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μA
nA
V GS = 0V, I D = 250μA
V DS = 24V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.3
-
-
-
1.8
35
54
4
0.8
2.2
60
100
-
1
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 3.1A
V GS = 4.5V, I D = 2A
V DS = 5V, I D = 3.1A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
305
40
40
1.4
4.1
9.0
1.2
1.5
2.6
4.6
13.1
2.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
?
nC
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 4.5V, I D = 3.1A
V DS = 15V, V GS = 10V, I D = 3.1A
V GS = 10V, V DS = 15V,
R G = 3 ? , R L = 4.7 ?
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
2 of 6
www.diodes.com
May 2012
? Diodes Incorporated
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